bsc190n15ns3 g opti mos ?3 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 150 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 50 a t c =100 c 33 pulsed drain current 2) i d,pulse t c =25 c 200 avalanche energy, single pulse e as i d =50 a, r gs =25 ? 170 mj gate source voltage 3) v gs 20 v power dissipation p tot t c =25 c 125 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/175/56 value v ds 150 v r ds(on),max 19 m ? i d 50 a product summary type bsc190n15ns3 g package pg-tdson-8 marking 190n15ns rev. 2.4 page 1 2009-11-04
bsc190n15ns3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1 k/w r thja 6 cm2 cooling area 3) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 150 - - v gate threshold voltage v gs(th) v ds = v gs , i d =90 a 234 zero gate voltage drain current i dss v ds =120 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =120 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =50 a -1619 m ? v gs =8 v, i d =25 a -1620 gate resistance r g - 2.4 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =50 a 29 57 - s values 2) see figure 3 thermal resistance, junction - ambient 1) j-std20 and jesd22 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.4 page 2 2009-11-04
bsc190n15ns3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1820 2420 pf output capacitance c oss - 214 285 reverse transfer capacitance c rss -5- turn-on delay time t d(on) -15-ns rise time t r -53- turn-off delay time t d(off) -25- fall time t f -6- gate char g e characteristics 5) gate to source charge q gs -10-nc gate to drain charge q gd -4- switching charge q sw -9- gate charge total q g -2331 gate plateau voltage v plateau - 5.7 - v output charge q oss v dd =75 v, v gs =0 v -6079nc reverse diode diode continous forward current i s - - 50 a diode pulse current i s,pulse - - 200 diode forward voltage v sd v gs =0 v, i f =50 a, t j =25 c - 1 1.2 v reverse recovery time t rr - 130 - ns reverse recovery charge q rr - 385 - nc 5) see figure 16 for gate charge parameter definition v r =75 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =75 v, f =1 mhz v dd =75 v, v gs =10 v, i d =50 a, r g =1.6 ? v dd =75 v, i d =50 a, v gs =0 to 10 v rev. 2.4 page 3 2009-11-04
bsc190n15ns3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 25 50 75 100 125 150 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] rev. 2.4 page 4 2009-11-04
bsc190n15ns3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 8 v 10 v 0 5 10 15 20 25 30 35 40 0 20406080 i d [a] r ds(on) [m ? ] 25 c 175 c 0 20 40 60 80 100 02468 v gs [v] i d [a] 0 20 40 60 80 100 0 40 80 120 160 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 0 0 20 40 60 80 012345 v ds [v] i d [a] rev. 2.4 page 5 2009-11-04
bsc190n15ns3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =50 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98% 0 5 10 15 20 25 30 35 40 45 50 55 60 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 90 a 900 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 1 10 2 10 3 10 4 0 20406080100 v ds [v] c [pf] 25 c 175 c 25c, 98% 175c, 98% 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 2.4 page 6 2009-11-04
bsc190n15ns3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =50a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 30 v 75 v 120 v 0 2 4 6 8 10 0 5 10 15 20 25 q gate [nc] v gs [v] 135 140 145 150 155 160 165 170 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i as [a] rev. 2.4 page 7 2009-11-04
bsc190n15ns3 g pg-tdson-8 outline rev. 2.4 page 8 2009-11-04
bsc190n15ns3 g published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and condi tions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon t echnologies office. infineon technologies components may be used in life-support de vices or systems only with the express written approval of infineon technologies, if a fai lure of such components can reasonably be expected to cause the failure of that life-suppor t device or system or to affect the safety or effectiveness of that device or system. life supp ort devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 2.4 page 9 2009-11-04
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